Robust hard bias/conductor lead structures for future GMR heads

ABSTRACT

A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.

RELATED PATENT APPLICATION

This application is related to Docket No. HT 99-028, Ser. No.09/483,937, filing date Jan. 18, 2000, assigned to the same assignee asthe current invention.

This application is also related to Docket No. HT 00-002, Ser. No.filing date, assigned to the same assignee as the current invention.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to the fabrication of a giantmagnetoresistive (GMR) magnetic field sensor for a magnetic read head,more specifically to the formation and material composition of itsconductive lead layers.

2. Description of the Related Art

Magnetic read sensors that utilize the magnetoresistive effect for theiroperation fall broadly into two classes: those that use the anisotropicmagnetoresistive effect (AMR) and those that use the giantmagnetoresistive effect (GMR). AMR based sensors are simplest instructure, since they require a single magnetic layer whose resistancevaries in proportion to the angle between its magnetization vector andthe direction of electron flow (the sensing or bias current) through it.GMR based sensors are typically implemented in a more complexconfiguration, the spin-valve (SVMR). The spin-valve structure alsoinvolves a sensing current, but it has two separated magnetic layers,one whose magnetization direction can change (the free layer) and theother whose magnetization direction is fixed. The spin-valve'sresistance is proportional to the angle between the magnetization ofthese two layers and the direction of the sensor current through themplays little role in the operation. Both forms of sensor require amethod for providing a sensing current and that method typicallyinvolves the formation of thin, conducting lead layers on either side ofthe sensor. The spin-valve sensor also requires an additional magneticlayer, called the longitudinal bias layer, which maintains the freemagnetic layer of the sensor in a stable orientation and a singlemagnetic domain state. In the SVMR sensor, the bias layer is typicallyformed of a hard magnetic material and is positioned on either side ofthe sensor element. Because of the location of the longitudinal magneticbias layer, it has become accepted practice in the prior art to form theconductive lead layer directly over the magnetic bias layer. Given theirrelatively passive electromagnetic role in the sensor operation, theconductive lead layers need only satisfy certain basic, albeitstringent, material requirements. They must have a low sheet resistance,they must withstand the rigors of the harsh environment encounteredduring normal operation of the read head (eg. contact with the rapidlymoving magnetic medium) and resist the equally harsh treatmentassociated with certain fabrication processes (eg. applications ofcorrosive chemicals) and they must not adversely affect the materialproperties of the magnetic bias layer on which they are formed.

The lead layers fabricated in accordance with the methods of the priorart have consisted mainly of layered structures such as Ta/Au/Ta,Cr/Ta/Cr, Ta/Mo/Ta, TiW/W/TiW. For example, McNeil (U.S. Pat. No.5,479,696) provides a combination read/write magnetic head in which theconducting leads are a Ta/Au/Ta lamination.

Goubau et al. (U.S. Pat. No. 5,268,806) disclose a lead layer structurewhich comprises a thin film layer of body-centered-cubic (bcc) tantalum(alpha-phase Ta) which is separated. from the sensor element by a thinfilm seed layer formed of material taken from the group consisting ofTiW, TaW, Cr and W. The alpha-phase tantalum has a particularly low bulkresistivity of about 13 micro-ohm-cm at 300 K. The other layer providesa conforming substrate with similar atomic structure as well ascorrosion and heat resistance.

Chen et al. (U.S. Pat. No. 5,491,600) disclose a multilayered conductivelead structure consisting of layers of conductive material alternatingwith layers of refractory metal, such as layers of gold/nickel alloyalternating with layers of tantalum. Gold is highly conductive, but itssoftness results in electromigration, smearing and nodule formationduring sensor use. Tungsten has excellent conductivity and is harderthan gold, but is subject to corrosion problems. Materials such asTiW/Ta have higher bulk resistivity and therefore require thick layersfor adequately low sheet resistivity.

Pinarbasi (U.S. Pat. No. 5,883,764) discloses a method for forming verythin and highly conductive lead layers over the longitudinal bias layersof a spin-valve type read sensor. The lead layer structure comprises twoadjacent seed layers of refractory metals deposited to modify thecrystallographic texture of subsequent layers. A layer of highlyconductive material is then deposited over said first and second seedlayers. The structure finally provided by Pinarbasi comprises a CoPtCrhard bias layer over which is formed a conductive lead layer consistingof a Ta/Cr seed bilayer on which is then deposited a Ta lead layer.

As recording densities on magnetic media continue to increase, theassociated read head sensors must become both narrower and thinner.Increasing the thinness of a sensor requires that both its longitudinalmagnetic bias layer and the conductive lead layer formed over it becomethinner. The formation of thinner longitudinal bias layers, in turn,requires new magnetic materials, structures and methods of formation.The formation of thinner lead layers requires conducting materials ofextremely high bulk conductivity so that their sheet conductivity iscorrespondingly high as the material is formed in very thin layers. Inaddition, the materials comprising the conductive lead layers mustretain the desirable properties of hardness, high melting point andcorrosion resistance so as to survive the rigors of a harsh operatingand fabricating environment. Most importantly, the formation of leadlayers on longitudinal bias layers of new hard magnetic materialrequires careful attention to the physical consequences ofcrystallographical matching between the magnetic layer and theconducting layer and between the various material layers that comprisethe conductive lead layer itself. It is towards these considerationsthat the objects of the present invention are addressed.

SUMMARY OF THE INVENTION

A first object of this invention is to provide a method for formingconductive lead layers for a spin-valve type magnetoresistive sensorelement, which lead layers will have the properties of low sheetresistance, high hardness, high melting point and corrosion resistancerequired for the harsh operating and fabricating environments of currentand future magnetic read head applications.

A second object of the present invention is to provide a method forforming conductive lead layers over longitudinal magnetic bias layers ofnew hard magnetic materials such that the conductive lead layers retainthe desired properties of low sheet resistance, high hardness, highmelting point and corrosion resistance required for the harsh operatingand fabricating environments of current and future magnetic read headapplications.

A third object of the present invention is to provide a method forforming conductive lead layers for a spin-valve type magnetoresistivesensor element that avoids the problems of lead oozing, smearing,electromigration and nodule formation associated with Ta/Au/Ta andsimilar lead layer structures of the prior art.

A fourth object of the present invention is to provide a method forforming conductive lead layers for a spin-valve type magnetoresistivesensor element that retain the overall thinness of the sensor elementwhen said lead layers are formed over longitudinal magnetic bias layersof new hard magnetic materials.

In accord with the objects of this invention there is provided a spinvalve magnetoresistive sensor having abutted junctions (on the sensorends) upon which are successively layered a seed layer, a longitudinalmagnetic bias layer of hard magnetic material and a conductive leadlayer. The typical hard magnetic bias material provided is comprised ofCoPtCr (or CoPt), which, being formed on a seed layer which is a bilayerof Ta/Cr, exhibits high coercivity and squareness (see, in this regard,related patent application HT00-002). Over the CoPtCr hard magnetic biaslayer is then formed an “interrupt” layer of amorphous Ta, whose purposeis to provide a crystallographic match with the conductive lead layerformed upon it. Said crystallographic match would not properly occur ifthe conductive layer were formed directly on the magnetic bias layer.The conductive lead layer is itself a lamination comprising, in oneembodiment, a layer of NiCr on which is formed a layer of Ru (or Rh orIr) and on which is formed a final layer of NiCr. The interrupt layer ofamorphous Ta allows the NiCr to grow with a (111) close packed planeparallel to the film plane and, thereby, to produce low sheet resistancein the NiCr/Ru/NiCr lamination due to specular reflection of theconduction electrons in the Ru layer (see, in this regard, relatedpatent application HT99-028). The conductive lead layer so formedcompares favorably in its sheet conductance to the standard prior artlayer lamination of Ta/Au/Ta, yet is far superior in respect to the,desired physical properties of hardness, high melting point, corrosionresistance and resistance to oozing, smearing, electromigration andnodule formation. In another embodiment, the objects of the presentinvention are met by forming a conductive layer of Rh or Ir directly onthe hard magnetic layer of CoPtCr, without an intervening interruptlayer and without a layer of NiCr beneath the conductive layer.

BRIEF DESCRIPTION OF THE DRAWINGS

The objects, features and advantages of the present invention areunderstood within the context of the Description of the PreferredEmbodiments, as set forth below. The Description of the PreferredEmbodiments is understood within the context of the accompanying figure,wherein:

FIG. 1 is a graphical representation of the results of a series ofexperiments to determine the functional relationship between thethickness of a conducting layer and the sheet resistance of aconfiguration consisting of a seed layer, a hard magnetic layer, theconductor layer in question and a capping layer. Two graphs are shown,one for the configuration of a preferred embodiment having Rh as aconductor, the other for a configuration having the usual Ta/Au/Taconductor configuration of the prior art.

FIG. 2 is a schematic diagram of the air bearing surface (ABS) of anabutted junction spin-valve type sensor element showing a layeredconfiguration formed on each junction end consisting of a seed layer,over which is formed a hard magnetic bias layer, over which is formed aconducting lead layer using the methods of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention provides a thin conductive lead layer of highsheet conductivity, high hardness, high melting point, high corrosionresistance and lacking the propensity for smearing, oozing,electromigration and nodule formation associated with lead layers of theprior art. Said properties make the lead layer so provided particularlysuitable for formation over a longitudinal bias layer of hard magneticmaterial on an abutted junction type spin valve sensor element for usein reading high density recordings at high RPM.

General Discussion

At the present time, as noted above in the prior art description,conductor lead layers are typically formed of laminates of Ta/Au/Ta.This combination has proven satisfactory as it provides relatively lowsheet resistance, due to the Au layer, and high corrosion resistance. Itis anticipated, however, that the Ta/Au/Ta arrangement and others likeit also cited in the prior art description, will no longer provesuitable for use in newer sensors intended for use in high performanceor high data rate drives. These sensors will require leads that, inaddition to the aforementioned properties of low sheet resistance andcorrosion resistance, are also harder and have a higher melting point.These additional properties are needed because of the harsherenvironment in which these sensors will be required to operate, e.g. indrives with appreciably higher RPM.

The present inventors have proposed two conductor lead embodiments fornewer head applications (see related patent application HT99-028). Theselead layers are made of (a) NiCr(55 A)/Ru (450-550 A)/NiCr (55 A) and(b) NiCr(55 A)/Rh (400-500 A)/NiCr (50 A), each characterized by a sheetresistance of between approximately 1.5-1.6 ohms/sq. The inventors havealso proposed a longitudinal hard magnetic bias layer embodiment havinghigh coercivity and squareness comprising an abutted junction spin-valvetype sensor element upon which is formed a seed layer of Ta/Cr with ahard magnetic layer of CoPtCr formed upon it. The CoPtCr has anhexagonal close packed crystal structure like that of Ru. When CoPtCr isdeposited on a Cr under-layer (ie the upper layer of the Ta/Cr seedlayer), its close packed plane is perpendicular to the film plane. Asillustrated in related patent application HT99-028, low resistance leadsof Ru or Rh are a result of growing the Ru or Rh on the NiCr underlayer,which is formed with its (111) close packed plane parallel to the filmplane. Low sheet resistance is then a result of the specular reflectionof conduction electrons at the NiCr/Ru and NiCr/Rh interface.

When the SVMR sensor is fabricated, the CoPtCr hard magnetic layerbecomes the underlayer for growing the NiCr/Rh (or Ru) conductor leadlayer. This sequence of layers, however, does not yield a lead layerstructure with low sheet resistance. The reason for this seems to be amis-match in crystal orientation between the hard magnetic layer and theconductor layer. To obtain the desired low resistance configuration, itwas determined that an “interrupt” layer must be interposed between theCoPtCr and the NiCr/Ru (or Rh). This “interrupt” layer is a layer of Ta,which has an amorphous structure, like aluminum oxide. The NiCr layer,when deposited upon the amorphous Ta layer is formed with its (111)close packed plane parallel to the film plane and the desired low sheetresistance is again obtained. It is also found that structure matchingbetween the hard magnetic layer and the conductor layer can be obtainedif the NiCr is removed from the layer sequence Cr/CoPtCr/NiCr/Rh (orIr)/NiCr. In this situation the close packed plane of the CoPtCr and theRh will be in a direction perpendicular to the plane of the layer.

Experimental Results and Discussion

Using the Veeco ion-beam deposition system (IBD), various conductor leadlayer structures were formed. To determine the most suitableconfigurations, NiCr/Rh/NiCr, NiCr/Ru/NiCr, Cr/Ta/Cr and Ta/Mo/Talaminates were first examined. The NiCr/Ru/NiCr and NiCr/Rh/NiCrconductor lead layers, which were found to have the lowest sheetresistance, were then incorporated into varied PM/conductor layer (PMmeaning permanent magnet or hard magnetic material) structures in whichthe conductor (Ru or Rh) thickness, x, could be varied, ie:

Cr(100 A)/CoCrPt(450 A)/NiCr(100 A)/Rh(x)/NiCr(50 A),

Cr(100 A)/CoCrPt(450 A)/Ta(50 A)/NiCr(50 A)/Rh(x)/NiCr(50 A),

Cr(100 A)/CoCrPt(450 A)/Rh(x)/NiCr(30 A), and:

Cr(100 A)/CoCrPt(450 A)/NiCr(100 A)/Ru(x)/NiCr(50 A),

Cr(100 A)/CoCrPt(450 A)/Ta(50 A)/NiCr(50 A)/Ru(x)/NiCr(50 A),

Cr(100 A)/CoCrPt(450 A)/Ru(x)/NiCr(30 A).

For comparison purposes, standard PM/conductor structures of the form:

Cr(100 A)/CoCrPt(450 A)/Ta(100 A)/Au(x)/Ta(100 A) were also fabricated.Annealing of the conductor layers and the structures above was done byusing a 280° C.-5 hour cycle, which is used in sensor element annealing.

Functional properties of the conductor lead structures are listed inTable 1, below and properties of the PM/conductor structures are listedin Table 2, below. Mo and Ta were ultimately dropped from the conductorlist because of higher sheet resistivity (see Table 1) and poorcorrosion resistance of the former. Reference to specific depositionrates in column 4 of Table 2 is to the deposition rates of the centralconducting layer of the triply laminated layer, ie.: Au at 124 A/min, Rhat 115 A/min and Ru at 60 A/min.

TABLE 1 Hard- Corro- Resistivity Resistivity Melting ness sion LeadLayer Xtal (as dep.) (annealed) Point (Vick- Resis- (angstroms) Typeμ-ohm-cm μ-ohm-cm (° C.) ers) tance Ta(50)/ FCC 3.8 4.4 1064 40 goodAu(500)/ Ta(50) NiCr(100)/ FCC 9.3 8.0 1965 210 good Rh(500)/ NiCr(100)NiCr(100)/ HCP 9.2 8.8 2310 550 good Ru(500)/ NiCr(100) Cr(100)/ BCC11.4 10.6 2617 225 poor Mo(500)/ Cr(100) Cr(100)/ BCC 18.3 17.0 2996 150good Ta(500)/ Cr(100)

TABLE 2 dep. Stress rate H_(c) PM/conductor (angstroms) R_(s) dyne/cm²A/min M_(r)t (Oe) Sq Cost Cr(100)/CoPtCr(450)/Ta(100)/ 1.57 −7.00E+09124 3.52 1600 0.84 1.0 Au(300)/Ta(100) Cr(100)/CoPtCr(450)/NiCr(100)/1.67 −2.60E+09 115 2.0 Rh(500)/NiCr(50) Cr(100)/CoPtCr(450)/Ta(50)/ 1.38NiCr(50)/Rh(500)/NiCr(50) Cr(100)/CoPtCr(450)/ 1.42 3.35 1610 0.86Rh(500)/NiCr(30) Cr(100)/CoPtCr(450)/NiCr(100)/ 1.89 −1.10E+10 60 0.2Ru(500)/NiCr(50) Cr(100)/CoPtCr(450)/Ta(50)/ 1.54NiCr(50)/Ru(500)/NiCr(50) Cr(100)/CoPtCr(450)/ 1.92 Ru(500)/NiCr(30)

The Ta underlayer in the first configuration (row 1) in Table 2 servestwo purposes. First, interdiffusion between the Ta and Au hardens the Aulayer. Second, the Ta serves as a barrier to Au diffusion into theCoPtCr hard magnetic layer. The capping layer is thinner for theconfigurations where Rh and Ru are the conductors because the Rh and Ruform smoother layers. Comparing the fourth configuration (row 5) withthe first configuration (row 1), it is noted that the elimination ofthe. Ta/NiCr barrier layer does not degrade the hard magneticproperties. Among the 3 conductor lead materials, the Ru has the lowestcost.

For the newer SVMR head configurations, the shield-to-shield spacing isbecoming progressively smaller. Thus, the stack height of thePM/conductor layers must be kept as small as possible if the problem ofshorting to the shield is to be eliminated. Referring now to FIG. 1,there is shown a graph comparing the sheet resistance (R_(s)) vsthickness (x) for two configurations, PM/Au and PM/Rh. From this data,we can design the conductor lead structures for the future headconfigurations.

Table 3, below, illustrates the PM/Rh conductor lead designs,to obtainR_(s)=1.5 and 2.0 ohms/sq. The first and third configurations (rows 1&4)are PM/Au lead configurations and are included for reference. It is alsonoted that the capping layer for the Rh conductor is Cr instead of NiCr,thus eliminating one additional target to be used in the ion-beamdeposition system.

TABLE 3 Conductor R_(S) thickness (ohms/ (ang- sq) PM/conductorconfiguration stroms) 1.50Ta/Cr(100)/CoPtCr(450)/Ta(100)/Au(310)/Ta(100) 510 1.50Ta/Cr(100)/CoPtCr(450)/Rh(475)/Cr(30) 505 2.00Ta/Cr(100)/CoPtCr(450)/Ta(100)/Au(240)/Ta(50) 390 2.00Ta/Cr(100)/CoPtCr(450)/Rh(350)/Cr(30) 380

Referring now to FIG. 2, there is shown a schematic view of an airbearing surface of a SVMR stack (10) having abutted junctions (12), uponwhich has been formed a hard magnetic (PM) layer (16) to providelongitudinal bias and, over said layer, a conductive lead layer (18),both formed in accord with the methods of the present invention. The PMlayer (16), serving here as an underlayer for the conductor lead layer(18) comprises a seed layer (14), which can be a structure such as Ta(50A)/Cr(50-15 A), upon which is formed a layer (15) of hard magneticmaterial, such as CoPtCr(350-500 A). The conductor lead layer (18),formed upon the PM layer so that their close packed planes are bothperpendicular to the film plane, comprises a layer of a conductingmaterial such as Rh, or Ir (the Ir having properties in every respectsimilar to those of Rh), upon which is then formed a capping layer ofeither Ta or Cr. For example, the PM/conductor configuration could be:

1) Ta(50 A)/Cr(100 A)/CoPtCr(350-500 A)/Rh(250-500 A)/Cr(30)

2) Ta(50 A)/Cr(100 A)/CoPtCr(350-500 A)/Ir(260-515 A)/Cr(30)

In an alternative embodiment which utilizes a Ta interrupt layer, the PMlayer Ta(50 A)/Cr(100 A)/CoPtCr(350-500 A) remains the same, but theconductive lead layer could be:

3) Ta(50 A)/NiCr(50 A)/Ru(365-520 A)/NiCr(3 A).

As is understood by a person skilled in the art, the preferredembodiments of the present invention are illustrative of the presentinvention rather than limiting of the present invention. Revisions andmodifications may be made to methods, materials, structures anddimensions employed in fabricating a thin conductive lead layer of highsheet conductivity, high hardness, high melting point, high corrosionresistance and lacking the propensity for smearing, oozing,electromigration and nodule formation, while still providing a methodfor fabricating such a thin conductive lead layer of high sheetconductivity, high hardness, high melting point, high corrosionresistance and lacking the propensity for smearing, oozing,electromigration and nodule formation in accord with the spirit andscope of the present invention as defined by the appended claims.

What is claimed is:
 1. A method for forming a thin conductive lead layerof high sheet conductivity, high hardness, high melting point, highcorrosion resistance and lacking the propensity for smearing, oozing,electromigration and nodule formation comprising: providing a laminatedhard magnetic underlayer comprising a seed double layer of Ta/Cr, uponwhich is formed a layer of the hard magnetic material CoPtCr or CoPt;forming over said underlayer an “interrupt” layer said layer being alayer of Ta having an amorphous structure and designed to orient thecrystal plane of a layer formed upon it in a direction parallel to theplane of that layer; forming over said “interrupt” layer a conductivelead layer having said properties of high hardness, high melting pointhigh corrosion resistance and lacking the propensity for smearing,oozing, electromigration and nodule formation said lead layer being athree layer lamination comprising a first layer of NiCr, upon which isformed a conducting layer of Ru, Rh or Ir, upon which is formed a secondlayer of NiCr, the interfaces between the NiCr and the conductingmaterial causing specular reflection of conduction electrons so as toenhance the sheet conductivity of the formation.
 2. The method of claim1 wherein the thickness of the Ta layer is in the range between 30 A and100 A, the thickness of the Cr layer is between 50 A and 150 A and thelayer of CoPtCr or CoPt is formed to a thickness between approximately150 A and 500 A.
 3. The method of claim 1 wherein the “interrupt” layerof Ta has a thickness of between 30 A and 75 A.
 4. The method of claim 1wherein the first layer of NiCr is formed to a thickness between 30 Aand 75 A, the layer of Ru is formed to a thickness of between 250 A and520 A and the second layer of NiCr is formed to a thickness between 30 Aand 50 A.
 5. A method for forming a thin conductive lead layer of highsheet conductivity, high hardness, high melting point, high corrosionresistance and lacking the propensity for smearing, oozing,electromigration and nodule formation comprising: providing a laminatedhard magnetic underlayer whose layer of hard magnetic material has itsclose packed crystal plane perpendicular to its layer plane, saidunderlayer further comprising a seed double layer of Ta/Cr, on which isformed a layer of the hard magnetic material CoPtCr or CoPt; formingover said underlayer a layer of conducting material whose close packedcrystal layer is also in a direction parallel to the underlayer andwhich thereby has high sheet conductivity resulting from the specularreflection of conduction electrons, said conducting material being Rh orIr; forming over said layer of conductive material a capping layer ofCr.
 6. The method of claim 5 wherein the thickness of the Ta layer is inthe range between 30 A and 75 A, the thickness of the Cr layer isbetween 50 A and 150 A, and the layer of hard magnetic material CoPtCror CoPt, is formed to a thickness between approximately 150 A and 500 A.7. The method of claim 5 wherein the layer of Rh is formed to athickness of between 250 A and 500 A.
 8. The method of claim 5 whereinthe layer of Ir is formed to a thickness of between 250 A and 515 A. 9.The method of claim 5 wherein the capping layer of Cr, is formed to athickness between 20 A and 50 A.